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ipTEST now offers a range of multi-prober test systems
with increased productivity and increased capability for
power discrete wafer testing. The key features and benefits
of our system are:
Productivity gains
- Multiple probers from one test system
- Lowest cost of test
- Reduced floor space
- Automated set-up with network capability
- Off line Binning
Capability
- Multiple die test capability
- Avalanche testing on wafer
- Low RDS(ON) test capability
- Dynamic switching at wafer level
- Wafer map / yield analysis
- Known Good Die solutions
Production testing at wafer level is performed on an automatic
wafer prober. Each die on the wafer is only contacted once
to prevent surface damage due to the scrubbing action of
the probe needles. The test resources therefore need to
be integrated to a single test site and the tests are performed
sequentially. ipTEST provides a range of serial test
heads for up to 2000 V and 200 A for wafer testing. The test groups may be summarised as follows:
Static Parameter tests
The High voltage test generator performs high voltage breakdown
and leakage current measurements. The Low voltage test generator performs the high current
on-state and active region tests.
Transient Thermal tests
All power discrete devices need verification that the bonding
processes have been successful during assembly. These tests
are performed on the FB test generator.
Avalanche Energy tests
MOSFETs especially, need a functional test to verify the
ruggedness necessary for inductive load applications. These
may be performed on the unclamped inductive switching test
generator UIS or on the dynamic switching test generator.
Dynamic Switching tests
Clamped inductive load dynamic switching tests and short circuit
tests are primarily performed on IGBT devices and their associated
fast rectifier diodes. MOSFET and Bipolar transistor switching
characteristic are mainly tested with resistive loads. The
dynamic switching test generator performs all these tests and
also provides a dynamic gate charge test capability.
Linear Voltage Regulator tests
If a precise measurement accuracy of 0.02% on voltage regulation
is required the Voltage Regulator test generator is the
solution.
Additional test capability
- Isolation testing
- Capacitance measurement
- Power module tests
Multiple probers from one test
system
The ipTEST parallel architecture allows a single
test system to drive multiple probers in true parallel,
utilising separate test resources for each prober. This
gives the highest productivity for a given floor space in
the clean room. The multi-user, multitasking system controller
allows up to four probers to be controlled from a single
test system. The X-windows CDE user interface allows each
prober to have a separate desktop making navigation a simple
process and enabling four probers to be managed by one operator.
Driving down the cost of test
Parallel testing makes the incremental cost of adding the
additional test resources to a system cabinet much lower
than providing another complete tester, allowing ipTEST
to deliver the lowest cost of test at wafer level.
Reduced floor space
A single tester driving up to four probers dramatically
reduces the tester footprint in the expensive clean-room
environment.
Automated set-up
The production automation
tools on Mostrak allow the tester to communicate in real-time
directly with the prober. The XY position co-ordinates of
the die may be transferred to the tester for wafer mapping,
or to enable multi-die testing in parallel. The tester can
communicate the Bin map for off-line inking/taping.
Off-line binning
We also have an off-line binning feature which runs a part
average testing (PAT) process across the wafer to eliminate
any die which has a variation greater than 3 sigma from
the average of the measured parameters. This can be run
after the probing process and avoids the necessity for re-probing
the wafer after sample testing.
All these functions can be set to run automatically, either
from a prober input, or from a user command, or from an
instruction from a network server. ipTEST is the
only discrete tester to support the SECSII protocol common
in wafer fab's.
Multiple die test capability
Testing multiple die in parallel on a wafer prober has
the advantage of increasing the productivity of any prober.
ipTEST has used this technique for testing Flip-chip
and Power BGA devices at wafer level on a film-frame prober.
For vertical power discrete wafers, the single back contact
at high currents and cross-coupling between die during high
voltage breakdown can cause difficulties in obtaining consistently
accurate test results on parallel die. ipTEST developed
a sequential test head to enable multiple die to be tested
at a single prober touchdown. The same test program may
be used for multiple die or single die, and the die present
signal is obtained from the wafer prober.
Avalanche tests at wafer level
Only ipTEST can offer integrated parametric and
avalanche (UIS) testing at wafer level with the capability
of testing up to 4 die in a single prober touchdown.
Low RDS(ON) testing
at wafer level
ipTEST has worked with both customers and prober &
probe card suppliers to obtain accurate RDS(ON)
measurements at wafer level. We have measured the latest trench
designed MOSFET wafers with an RDS(ON) of less than 2 mOhms, and experimented with 600 uOhm die.
Dynamic switch testing at wafer
level
ipTEST has also provided dynamic switch testing
at wafer level and even short circuit testing on IGBT die
while protecting the probe needles from over current damage.
Known Good Die (KGD) testing
If die are assembled in automotive multi-chip modules containing
say 36 die, and if the module yield needs to be at least
85% to be economically viable, the average die yield must
be at least 99.55% assuming a zero defect rate for assembly.
Normal parametric screening of the die at wafer level may
not be sufficient to eliminate the failure rate to below
0.45% it may become necessary to screen out defects after
dicing into individual die.
ipTEST has provided solutions for known-good die
testing both for conventional IGBT and MOSFET die, and for
Flip-chip devices. We have delivered customer satisfaction
in the USA, Europe and Japan.
Devices we test
- MOSFET
- IGBT
- Bipolar transistor
- Diode, rectifiers
- Thyristor (SCR), Triac
- Linear voltage regulator (VReg)
- Transient voltage suppressor (TVS)
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